Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti
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Novel Layered and 2D Materials for Functionality Enhancement of Contacts and Gas Sensors
II The cover image shows partial intercalation of gold (in yellow) into Ti3SiC2 observed by scanning transmission electron microscopy; a result from my research. During the course of research underlying this thesis, I was enrolled in Agora Materiae, a multidisciplinary doctoral program at Linköping University, Sweden. Abstract Chemical gas sensors are widely-used electronic devices for detectin...
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This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements ...
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The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While intercalation of noble metals in vdW solids is known, formation of compounds by incorporation of noble-metal layers in non-vdW layered solids is largely unexplored. Here, we show formation of Ti3AuC2 and Ti3Au2C2 phases with up to 31% lattice swelling by a substitutional solid-state reaction of Au...
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As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for appli...
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تاریخ انتشار 2015